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savantic semiconductor product specification silicon npn power transistors 2SC3281 d escription with to-3pl package complement to type 2sa1302 applications power amplifier applications recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 1.5 a p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3281 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 200 v v cesat collector-emitter saturation voltage i c =8a ;i b =0.8a 2.5 v v be base-emitter voltage i c =8a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =200v; i e =0 5 a i ebo emitter cut-off current v eb =5v; i c =0 5 a h fe-1 dc current gain i c =1a ; v ce =5v 55 160 h fe-2 dc current gain i c =8a ; v ce =5v 35 f t transition frequency i c =1a ; v ce =5v 25 mhz c ob collector output capacitance f=1mhz;v cb =10v 270 pf h fe-1 classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon npn power transistors 2SC3281 package outline fig.2 outline dimensions (unindicated tolerance:0.50 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3281

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